Available Technologies


Project TitleCompact High-Performance Material Property Measurements
Track Code2016-094
Short DescriptionPrincipal Investigators: Patrick Hopkins, Jon Gaskins, Brian Foley

From aircraft parts to microelectronic components, being able to accurately measure material thin films for quality assurance is critical to many industries. For example, films of dielectric materials (e.g. oxides) and conducting materials (e.g. metals) are used in a range of microelectronic, optical, and biomedical devices. As microelectronic devices continue to get smaller, Silicon on sapphire (SOS) based methods and materials have replaced Silicon on insulator (SOI) technology for next generation MOS devices. Traditional in situ non-destructive techniques for film characterization at this scale have been optical-based. Sapphire, being transparent over a wide wavelength range, makes current optical-based methods like ellipsometry difficult to apply. Other measurement approaches, like direct absorption methods are typically operated in visible range (or near UV and near IR) which also proves difficult for the transparent nature of Sapphire. Additionally, short-pulsed-based acoustic wave techniques rely on spatially localized absorption, which proves nearly impossible for transmissive systems, unless a costly and time-consuming metal film is introduced on top. To address these problems, researchers at the University of Virginia, have developed a new system and approach based on frequency domain thermoflectance (FDTR). The researchers have demonstrated a continuous wave FDTR system capable of fast, accurate thin film stacks measurements, including transparent sapphire, and layers involving single- and few-layer-graphene. The device and methods achieved nanometer resolution and measurements on the order of seconds.

Tagssemiconductor; non-destructive; metrology; films; frequency domain thermoflectance; FDTR; silicon on sapphire; sapphire; silicon on insulator; SOS; SOI; microelectronics
Posted DateAug 8, 2017 9:50 AM